www.goodark.com page 1 of 6 rev.2.0 ssf d 6 0 3 5 60v p-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity SSFD6035 SSFD6035 dpak - - - absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v i d (25 ) -26 a i d (70 ) -20 a drain current-continuous@ current-pulsed (note 1) i dm -60 a maximum power dissipation p d 60 w operating junction and storage temperature range t j ,t stg -55 to 175 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 25 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250a -60 v general features v ds =- 60v,i d =-26a r ds(on) < 40m @ v gs =-10v r ds(on) < 55m @ v gs =-4.5v high power and current handing capability lead free product surface mount package description the SSFD6035 uses advanced trench technology to provide excellent r ds(on) and low gate charge .this device is suitable for use as a load switch or in pwm applications. applications pwm applications load switch power management schematic d iagram marking and p in assignment d g s SSFD6035 top view
www.goodark.com page 2 of 6 rev.2.0 ssf d 6 0 3 5 60v p-channel mosfet zero gate voltage drain current i dss v ds =-48v,v gs =0v -1 a gate-body leakage current i gss v gs =20v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250a -1 -1.8 -2.5 v v gs =-10v, i d =-20a 31 40 m drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-20a 42 55 m forward transconductance g fs v ds =-5v,i d =-20a 5 s dynamic characteristics (note4) input capacitance c lss 3060 pf output capacitance c oss 300 pf reverse transfer capacitance c rss v ds =-30v,v gs =0v, f=1.0mhz 205 pf switching characteristics (note 4) turn-on delay time t d(on) 14 ns turn-on rise time t r 20 ns turn-off delay time t d(off) 40 ns turn-off fall time t f v ds =-30v,v gs =-10v,r gen =3 i d =1a 19 ns total gate charge q g 48 nc gate-source charge q gs 11 nc gate-drain charge q gd v ds =-30v,i d =-20a,v gs =-10v 10 nc body diode reverse recovery time t rr 40 ns body diode reverse recovery charge q rr i f =-20a, di/dt=100a/s 56 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-1a -0.72 -1 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on 1in 2 fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
www.goodark.com page 3 of 6 rev.2.0 ssf d 6 0 3 5 60v p-channel mosfet typical electrical and thermal characteristics figure 1:switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms figure 3 power dissipation t j -junction temperature( ) p d power(w) -i d - drain current (a) -vds drain-source voltage (v) figure 5 output characteristics figure 4 drain current -i d - drain current (a t j -junction temperature( ) figure 6 drain-source on-resistance rdson on-resistance(m ) -i d - drain current (a)
www.goodark.com page 4 of 6 rev.2.0 ssf d 6 0 3 5 60v p-channel mosfet figure 8 drain - source on - resistance normalized on-resistance t j -junction temperature( ) -vgs gate-source voltage (v) -i d - drain current (a) figure 7 transfer characteristics -vgs gate-source voltage (v) qg gate charge (nc) figure 11 gate charge c capacitance (pf) figure 10 capacitance vs vds -vds drain-source voltage (v) figure 9 rdson vs vgs rdson on-resistance(m ) -vgs gate-source voltage (v) figure 12 source - drain diode forwar d -vsd source-drain voltage (v) -i s - reverse drain current (a)
www.goodark.com page 5 of 6 rev.2.0 ssf d 6 0 3 5 60v p-channel mosfet square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance z thja normalized transient thermal resistance figure 13 safe operation area -i d - drain current (a) vds drain-source voltage (v)
www.goodark.com page 6 of 6 rev.2.0 ssf d 6 0 3 5 60v p-channel mosfet dpak package information notes 1. dimensions are inclusive of plating 2. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters unit: mm
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